论文部分内容阅读
当半导体技术节点缩小至14 nm及以下时,光刻技术也逐渐接近了其物理极限。光源掩模协同优化(SMO)作为一种新型的分辨率增强技术,能够显著提升极限尺寸下半导体光刻的重叠工艺窗口,有效延伸当前常规光刻技术的生存周期。综述了SMO这一技术,分析了SMO的原理,介绍了该技术的发展和在半导体制造工艺中的应用,重点探讨了其在先进光刻节点研发中的应用,并对其挑战和发展趋势进行了展望,认为SMO不仅是193 nm浸润式光刻技术的重要组成部分,也将是EUV光刻中必不可少的一种技术。
When semiconductor technology nodes shrink to 14 nm and below, the lithography technology is gradually approaching its physical limit. Light Source Mask Co-optimization (SMO), as a new resolution enhancement technology, can greatly improve the overlapped process window of semiconductor lithography at the limit size and effectively extend the life cycle of current conventional lithography. This article summarizes the technology of SMO, analyzes the principle of SMO, introduces the development of this technology and its application in the semiconductor manufacturing process, and focuses on the application of SMO in the research and development of advanced lithography nodes. The challenges and development trends of SMO Looking forward, SMO is considered not only an important part of 193 nm immersion lithography, but also an indispensable technology in EUV lithography.