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本文比较了具有旁路PCl_3注入的In-PCl_3-H_2(液态源)和InP-PCl_3-H_2(固态源)系统.计算中除引入流动效率和反应效率来计入源区反应的不完全性外,对液态源还引入磷的通过效率α来修正铟对气相中磷的吸收.计算表明这二个系统的主要差别是气相中Ⅲ/Ⅴ比值不同.计算结果支持主要淀积反应可能是 InCl+PH_3= InP + HCl+H_2的假设,并且预计固态源系统生长速度的重现性仅略优于液态源系统.
In this paper, the In-PCl_3-H_2 (liquid source) and InP-PCl_3-H_2 (solid source) systems with by-pass PCl_3 injection were compared. In addition to the incompleteness of the reaction in the source region in addition to the introduction of flow efficiency and reaction efficiency , The introduction of phosphorus into the liquid source through the efficiency of α to correct the absorption of phosphorus in the gas phase indium calculated that the main difference between these two systems is the gas phase Ⅲ / Ⅴ ratio is different. The results support the main deposition reaction may be InCl + PH_3 = InP + HCl + H_2, and it is expected that the reproducibility of the solid source system growth rate is only slightly better than that of the liquid source system.