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随着半导体器件工艺技术的发展,人们日益广泛地采用LPCVD法生长作为介质或表面钝化用的氮化硅和作为MOS器件栅电极用的多晶硅。 在氮化硅、多品硅生长的同时,这些物质也会生长到反应管内壁上(这是人们所不希望产生的)。随着生长炉数的增多,附在反应管内壁的薄膜也相应加厚。当累积厚度超过10微米时,由于薄膜与石英之间膨胀系数有差异,而产生龟裂现象(石英管内壁龟裂,直观的来看是腐蚀掉氮化硅或多晶硅后内壁发毛)。在严重情况下会产生掉皮现象,影响片子质量及机械泵的使用寿命。
With the development of semiconductor device process technology, silicon nitride for passivation or surface passivation and polycrystalline silicon for gate electrode of MOS devices are increasingly widely grown by LPCVD. In the silicon nitride, multi-silicon growth at the same time, these substances will also grow to the inner wall of the reaction tube (which is one of the people do not want to produce). As the number of growth furnace increases, the film attached to the inner wall of the reaction tube is also correspondingly thicker. When the accumulated thickness exceeds 10 μm, a crack is generated due to the difference in expansion coefficient between the film and the quartz (the inner wall of the quartz tube is cracked, and the inner wall becomes blush intuitively after silicon nitride or polysilicon is etched away). Under severe conditions will produce the phenomenon of peeled, affecting the quality of the film and the life of the mechanical pump.