论文部分内容阅读
具有和真空管同样性能的固体放大器件的设想已在三十年代就提出来,1948年发明点接触型双极晶体管的巴丁、布拉吞、肖克莱等人最初也是把实现目前的场效应晶体管作为努力的目标,这已是众所周知的历史事实。此后,双极晶体管取得了惊人的进步,而与此相反,场效应管却处于停滞状态。从双极晶体管的飞速发展情况看来,继锗晶体管之后的硅晶体管难道不是完全取代小信号放大用以至于高频大功率用的真空管吗?实践回答,否!在包括硅晶体管在内的半导体放大器件前进道路上出现了强大的竞
The idea of a solid-state amplifier with the same performance as a vacuum tube was proposed in the 1930s. Budding, Bratun, Shockley, and others, who invented the contact-type bipolar transistor in 1948, were also the first to implement the current field effect As the goal of hard work, it is a well-known historical fact. Since then, bipolar transistors have made amazing advances, while the other hand, FETs are at a standstill. It seems from the rapid development of bipolar transistors, following the germanium transistor after the silicon transistor is not completely replace the small signal amplification for high-frequency high-power vacuum tube it? Practice answer, no! Including silicon transistors, including semiconductors Amplifier device on the road appeared a strong competitive