等离子体浸没式离子注入(Plasma Immersion Ion Implantation—PIII)是一种新型的材料表面改性技术。它克服了传统离子注入的溅射效应,改善了注入的均匀性,消除了视线注入的限制,可处理形状复杂的工件,装置简单,并可批量生产。PIII技术存在的问题是注入能量低,注入层较浅。为克服这一缺点,本文采用将PIII技术与离子束增强沉积(IBED)相结合的复合处理方法,即等离子体浸没式离子束增强沉积(PIII-IBED)。 Plasma Immersion Ion Implantation-PIII is a new material surface modification technology. It overcomes the sputtering effect of traditional ion implantation, improves the uniformity of injection, eliminates the limitation of line-of-sight injection, and can handle complex shaped parts. The device is simple and can be mass-produced. The problem with PIII technology is the low energy injected and the shallow injection layer. In order to overcome this shortcoming, we use PIII-IBED combined plasma-enhanced ion implantation (IBED) with PIII-IBED.