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用LOCOS工艺制备出栅介质厚度为 3 4nm的MOS电容样品 ,通过对样品进行I V特性和恒流应力下V t特性的测试 ,分析用氮气稀释氧化法制备的栅介质的性能 ,同时考察了硼扩散对栅介质性能的影响 .实验结果表明 ,制备出的 3 4nmSiO2 栅介质的平均击穿场强为 16 7MV/cm ,在恒流应力下发生软击穿 ,平均击穿电荷为 2 7C/cm2 .栅介质厚度相同的情况下 ,P+ 栅样品的击穿场强和软击穿电荷都低于N+ 栅样品
MOS capacitor samples with a gate dielectric thickness of 34nm were fabricated by LOCOS process. The characteristics of the gate dielectric prepared by the nitrogen dilution oxidation method were analyzed by IV characteristics and Vt characteristics under constant current stress. The effects of boron Diffusion on the gate dielectric performance.The experimental results show that the average breakdown field strength of the prepared 34nmSiO2 gate dielectric is 16 7MV / cm, soft breakdown occurs under the constant current stress, the average breakdown charge is 27C / cm2 With the same gate dielectric thickness, the breakdown field strength and the soft breakdown charge of the P + gate sample are both lower than that of the N + gate sample