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采用脉冲激光沉积技术在Pt/Ti/SiO2/Si衬底上沉积了非晶Lu2O3薄膜,制作了W和Ta作为顶电极的W/Lu2O3/Pt和Ta/Lu2O3/Pt堆栈结构器件,并运用Keithely4200-SCS测试平台分析了其电阻转变特性。在对器件加载电压后,Ta/Lu2O3/Pt器件未表现出阻变存储特性,然而W/Lu2O3/Pt表现出良好的双极性电阻转变特性,其高低阻态比大于103。经过大于1×104s的读电压,高低阻态的电阻值没有发生明显的变化,表现出良好的数据保持能力。通过对高低阻态的电流电压关系、电阻值与器件面积的关系和电阻值与温度的关系的研究,分析认为导电细丝的形成和破灭机制是导致W/Lu2O3/Pt器件发生电阻转变现象的主要原因。
An amorphous Lu2O3 thin film was deposited on a Pt / Ti / SiO2 / Si substrate by pulsed laser deposition. W / Lu2O3 / Pt and Ta / Lu2O3 / Pt stack devices with W and Ta as the top electrodes were fabricated and fabricated using Keithely4200 The -SCS test platform analyzes its resistance transition characteristics. However, the Ta / Lu2O3 / Pt device shows no resistive storage after the voltage is applied to the device. However, W / Lu2O3 / Pt exhibits good bipolar resistance transition with a high and low resistivity ratio greater than 103. After more than 1 × 104s read voltage, high and low resistance of the resistance value did not change significantly, showing good data retention. Through the relationship between the voltage and current at high and low resistance states, the relationship between resistance and device area and the relationship between resistance and temperature, it is considered that the formation and disruption mechanism of conductive filaments is the cause of the resistance transformation of W / Lu2O3 / Pt devices main reason.