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分别通过VLS和VS生长机制得到了Si3N4纳米线和纳米带。产物经X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)等表征手段进行了分析。FTIR图谱表明它们在800 ~1100cm-1的波数范围内有一个宽的吸收带,这是Si-N键伸缩振动模式的典型吸收带。它们的室温光致发光图谱显示,在420nm左右都有一很强的发射带,表明其将在纳米光电器件中有潜在应用。另外,Si3N4纳米线发光峰与纳米带的发光相比有少许蓝移(蓝移约4nm),这可能和晶须尺寸的少许差别有关。至于纳米带的发光强度大于纳米线的原因,可能是纳米带的比表面积相对较大,有利于悬键的形成,从而导致材料结构内缺陷的浓度较大。
Si3N4 nanowires and nanoribbons were obtained by VLS and VS growth mechanisms respectively. The products were characterized by XRD, SEM and TEM. FTIR spectra show that they have a broad absorption band in the wavenumber range of 800 to 1100 cm-1, which is a typical absorption band for the stretching vibration mode of Si-N bonds. Their photoluminescence spectra at room temperature show that there is a strong emission band around 420 nm, indicating that they will have potential applications in nanometer optoelectronic devices. In addition, the Si3N4 nanowire luminescence peak has a slight blue shift (a blue shift of about 4 nm) compared to the luminescence of the nanoribbon, which may be related to a slight difference in whisker size. The reason why the luminous intensity of the nanoribbon is larger than that of the nanowire may be that the specific surface area of the nanoribbon is relatively large, which is favorable for the formation of the dangling bond, resulting in a larger concentration of defects in the material structure.