enhancement-mode相关论文
Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were......
,Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor wi
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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 ga
Two types of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-H......
,High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapo
Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostruct......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression o
We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate struc......
在蓝宝石衬底上制备了栅长Lg为0.25μm的增强型Al_2O_3/AlGaN/GaN MIS-HEMTs,采用刻蚀凹栅与ALD（原子层淀积）Al_2O_3介质层的方法研......
随着射频/微波器件的快速发展及其应用领域的日益扩大,基于半导体单片集成技术的多种器件集成工艺不断发展。研究了一种采用AlGaAs......
优化了GaAs基InGaP/AlGaAs/InGaAs赝配高电子迁移率晶体管（PHEMT）的外延结构,有利于获得增强型PHEMT的正向阈值电压.采用光学接触式......
介绍了增强型InGaP／AlGaAs／InGaAs PHEMT小信号等效电路中元件参数值的提取方法，并利用IC-CAP软件EEHEMT1模型提取了参数．利用ADS软件......
