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本文根据半导体材料的性能参数对5μm厚度GaP/CuInS_2异质结单晶和多晶薄膜太阳电池在各种掺杂浓度下的光伏特性作了较严格的分析与计算。要计算中具体考虑到耗尽区密度W(或光电压V)的变化以及内表面复合损失对光电流J_L的影响,此外还用晶界复合损失模型计算了晶粒度对光电流及光伏特性的影响。发现存在一个最佳化的CulnS_2掺杂浓度Na_(max),对于单晶和R=4μm的多晶电池,Na_(max)=10~(16)/cm~3,相应的最大转换效率η分别为16.2％和15.2％。
In this paper, according to the performance parameters of semiconductor materials, the photovoltaic properties of GaP / CuInS_2 heterojunction single crystal and polycrystalline thin film solar cells with 5μm thickness under various doping concentrations have been analyzed and calculated strictly. To calculate the specific consideration of the depletion region density W (or photovoltaic voltage V) changes and the internal surface recombination loss on the photocurrent J_L, in addition to the grain boundary composite loss model was calculated grain size of the photocurrent and photovoltaic characteristics Impact. The optimum concentration of CulnS_2 was found to be Na max. For single crystal and polycrystalline silicon with R = 4 μm, Na max = 10 ~ (16) / cm ~ 3 and corresponding maximum conversion efficiencies η 16.2% and 15.2%.