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有各种方法,可用于在低压下合成金刚石膜。我们采用了热钨丝辅助化学气相沉积的方法。这个方法的优点是成膜比较均匀,且比较容易按比例放大。在一真空系统内置一个加热炉,以提供衬底从600℃到800℃的温度范围,在衬底上方置一钨灯丝,其工作在1700℃到1900℃,甲烷和氢气按一定比例混合后进入沉积室,甲烷所占的体积比为0.5%—1%,剩余的是氢气。在生长过程中,热钨丝在甲烷的作用下,将生成 W_2C,其电阻率也相应变
There are various methods that can be used to synthesize diamond films at low pressure. We used hot tungsten wire assisted chemical vapor deposition method. The advantage of this method is film forming more uniform, and easier to scale up. In a vacuum system built a furnace to provide the substrate from 600 ℃ to 800 ℃ temperature range, a tungsten filament placed above the substrate, which works at 1700 ℃ to 1900 ℃, methane and hydrogen mixed into a certain ratio Sediment chamber, methane volume ratio of 0.5% -1%, the rest is hydrogen. In the growth process, hot tungsten filament in the role of methane, will generate W_2C, its resistivity also corresponding change