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这是一篇学术报告,经过整理。为了说明问题,也涉及一些国外情况,元件应用装置情况。 一、我国电力半导体器件和装置生产情况 我国硅整流器1961年有一些研制品,1962年开始有少量的硅整流装置。64年开始有硅可控元件,65年有一些硅可控装置,一直到73年发展较快。随着元件的电压、电流容量增大和应用的发展,要求有高的动态参数。当时,由于动态参数尤其是di/dt耐量低,使可控硅成为“
This is an academic report. In order to illustrate the problem, it also involves some foreign situations, component application devices. I. Production status of China’s power semiconductor devices and devices China’s silicon rectifiers had some developments in 1961, and in 1962 there were a few silicon rectifiers. In the beginning of 64 years, there were silicon-controlled elements. In the 65 years, there were some silicon-controlled devices. It was developed rapidly in 73 years. With the increase of voltage and current capacity of components and the development of applications, high dynamic parameters are required. At that time, due to the low dynamic parameters, especially di/dt tolerance, the thyristor became "