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外量子效率高达27%、几何形状简单(划成矩形方块)的新型发光二极管已研制成功。二极管所用材料是采用一次多片液相外延技术制得的,此材料中的Al组份有一很大的梯度。除去GaAs衬底,就可以利用这个梯度,使光子沿着吸收非常低的路经,从外延层开始生长这边射出。这种发光二极管的光谱分布可以在很大的范围内变化。加速老化研究表明,这种二极管具有很高的可靠性。
External quantum efficiency of up to 27%, the geometry of a simple (zoned rectangular box) of the new light-emitting diode has been successfully developed. Diode material is used by a multi-chip liquid phase epitaxial technology made of this material Al composition has a very large gradient. With the exception of the GaAs substrate, this gradient can be exploited to allow photons to be emitted along very low pathways and grow from the epitaxial layer. The spectral distribution of such light-emitting diodes can vary widely. Accelerated aging studies have shown that this diode has high reliability.