STUDY OF F~--ISFET

来源 :Journal of Electronics(China) | 被引量 : 0次 | 上传用户:hxlatxx
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The fluorine ion sensitive field-effect transistor(F<sup>-</sup>-ISFET)is made by depositingvery thin LaF<sub>3</sub> film on grid of field-effect transistor with sputter method.The operating principle,measuring method and measured
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