Insulated相关论文
Starting friction would be induced and preserved somewhere along the seabed route of cased insulated flowlines(CIF) when......
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Explosion-insulatedFulOpticalFiberDiferential-presureMeasuringInstrument①ZHENGDezhong, WUChangqi, WANGZhenchen, ......
The paper considers three common snubber circuits used on gate turn-off thyristor and/or insulated gate bipolar transis......
An X-band magnetically insulated transmission line oscillator (MILO) is designed and investigated numerically and experi......
This paper puts forward a novel magnetically insulated transmission line oscillator (MILO) for the first time which take......
The influence of electron irradiation on the switching speed in insulated gate bipolar transistors(IGBT) with different ......
The modeling of switching loss in semiconductor power devices is important in practice for the prediction and evaluation......
An accumulation channel trench gate insulated gate bipolar transistor(ACT-IGBT) is proposed.The simulation results show ......
A new SOILIGBT(lateral insulated-gate bipolar transistor) with cathode-and anode-gates on partial membrane is proposed.A......
A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the tren......
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Conductivity modulation enhanced lateral IGBT with SiO_2 shielded layer anode by SIMOX technology on
A new lateral insulated-gate bipolar transistor(LIGBT) with a SiO_2 shielded layer anode on SOI substrate is proposed an......
A novel magnetically insulated transmission line oscillator(MILO) in which a modified HEM 11 mode is taken as its main i......
Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to back
The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors (NPT-IGBTs......
A novel short-anoded insulated-gate bipolar transistor(SA-IGBT) with double emitters is proposed.At the on-state,the new......
An overall analysis of the trench superjunction insulated gate bipolar transistor(SJ IGBT) is presented and a detailed c......
We report a new monolithic structure of GaN-based light-emitting diode(LED) which can be operated under high voltage or ......
A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pi
A high voltage(> 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT......
The RC-IGBT(reverse conducting insulated gate bipolar transistor) is a new kind of power semiconductor device which has ......
A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bip......
A tunable magnetically insulated transmission line oscillator(MILO) is put forward and simulated. When the MILO is drive......
A new semi-insulation structure in which one isolated island is connected to the substrate was proposed.Based on this se......
A novel trench field stop(FS) insulated gate bipolar transistor(IGBT) with a trench shorted anode(TSA)is proposed. By in......
This letter proposes a high-conductivity insulated gate bipolar transistor(HC-IGBT) with Schottky contact formed on the ......
In order to enhance the power capacity, an improved Ku-band magnetically insulated transmission line oscillator(MILO) wi......
Finite Element Analysis and Linear Regression of Maximum Temperature for Inner Wall of Chimney Found
The uniform design method was adopted and the twenty-four groups of different geometric and physical pa-rameters were ch......
The development of fissures in expansive soils has a great effect on the stability of slope. Of the three phases of soil......
Impact of light-weight external thermal insulation materials on building surrounding thermal environ
The method for calculating wall surface heat storage coefficient was introduced,and the coefficients of several common w......
The domestic electric use of copper and alumi- num conductors in 2006 have reached 3.54 and 1.07 million tons respective......
Leakage of the private key has become a serious problem of menacing the cryptosystem security. To reduce the underlying ......
The ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As are important materialswhich have been widely used in m......
On the basis of on-site measured data of the newly constructed Gonghe-Yushu Highway in a permafrost region, this paper a......
This paper deals with a numerical analysis of the evaporation of a thin binary liquid film by forced convection inside a......
The beam centering is very important for the compact cyclotron, especially for the cyclotrons with the axial injection. ......
The magnetohydrodynamic(MHD) pressure drop for liquid-metal-selfcooled blankets may be significantly reduced using elec......
A method for analyzing the dynamic energy spectrum of intense pulsed ion beam(IPIB) was proposed.Its influence on beam e......
Based on the characteristic of key-insulated public-key cryptosystem, we propose a distributed random session keys distr......
绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT),关断过压问题始终是设计者亟待解决的主要问题。单单依靠合理的多......
Many identity-based signature (IBS) schemes solving key escrow were proposed. But the updating of the private keys wasn......
In proxy signature schemes,the proxy signer B is permitted to produce a signature on behalf of the original signer A. Ho......
The only known construction of key-insulated signature(KIS) that can be proven secure in the standard model is based on ......
To tackle the key-exposure problem in signature settings,this paper introduces a new cryptographic primitive named thres......
It is important to ensure the private key secure in cryptosystem. To reduce the underlying danger caused by the private ......
A magnetically insulated transmission line(MITL)is used to transmit high power electric pulses in large pulse power syst......
In-situ tests and numerical manipulations were conducted for comparison of superior/inferior quality of casing-tube-vacu......
This paper introduces the Insulated gate bipolar transistor(IGBT)in-verter for arc welding.The principle of the inverter......
The fluorine ion sensitive field-effect transistor（F<sup>-</sup>-ISFET）is made by depositingvery thin LaF<sub>3</sub> film......
文章简要介绍了双谐振固态特斯拉线圈DRSSTC（DualResonantSolidStateTeslaCoil）的基本原理及其组成，结合IGBT软开关技术和半桥电路，设......
