本文介绍自行改造成的LS-50光刻机的结构.性能及特点.它是以JKG1光刻机为主体,对其曝光光学系统、掩模版及硅片的安放装夹机构作了重新设计.同时.增加了光源调节机构、氮气净化及散热等辅助设施.曝光面积从原来最大φ35mm扩大到φ50mm光学均匀性在95%以上,最大光强达15mW/cm~2,使分辨率为1.5—2μm的版获得满意的复印效果.该机通用于硅片尺寸φ30—50mm,光刻线条3—5μm的中、大规模集成电路的光刻生产. This paper introduces the structure, performance and characteristics of the LS-50 lithography machine which is self-made by itself.It redesigned its exposure optical system, reticle and silicon mounting mechanism by taking JKG1 lithography as the main body. At the same time, an increase of light source adjustment mechanism, nitrogen purification and cooling and other ancillary facilities.Exposed area from the original maximum φ35mm expanded to φ50mm optical uniformity of more than 95%, the maximum light intensity of 15mW / cm ~ 2, the resolution of 1.5-2μm Version of the copy to obtain satisfactory results.The machine is commonly used in silicon size φ30-50mm, photolithography lines 3-5μm, large-scale integrated circuit lithography production.