论文部分内容阅读
本文对光纤通信的单模激光器及集成光路的沟道衬底低温液相外延进行了研究。确定了760℃下的平衡液相和固相组分;测得Ge在(GaAl)As中的有效分配系数及其温度关系。研究了衬底沟道的腐蚀条件,发现外延生长与起始温度及过冷度有关。
In this paper, the single-mode lasers used in optical fiber communication and the low temperature liquid phase epitaxy of channel substrate with integrated optical path are studied. The equilibrium liquid and solid components at 760 ℃ were determined. The effective partition coefficient of Ge in (GaAl) As and its temperature were measured. The corrosion conditions of the substrate channel were investigated. It was found that the epitaxial growth was related to the initial temperature and undercooling.