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采用直流热阴极PCVD方法间歇生长模式,在CH4-H2气氛常规制备微米晶金刚石膜的参数条件下,利用人工干预二次形核工艺,研究了间歇周期变化对制备纳米晶金刚石膜的影响。人工干预二次形核是指通过生长温度的周期性改变而诱发二次形核行为,从而实现金刚石膜的纳米晶生长。金刚石膜周期性生长过程分为沉积阶段和干预阶段,沉积阶段主要完成金刚石膜的生长,干预阶段将沉积温度降低到600℃,然后恢复到生长温度,即完成一个生长周期。间歇周期研究主要是考察在不同间歇时间里人工干预诱导二次形核的效果,间歇时间设定为1 min、5 min、10 min、15 min、20 min,生长时间设为20 min,总的沉积时间为6 h。采用拉曼光谱仪、SEM和XRD对样品进行了分析,结果表明直流热阴极PCVD方法间歇生长模式,间歇周期的变化,对二次形核的发生有诱导作用,适当选择间歇周期,有利于二次形核基团的生成。
The effect of intermittent cyclic variation on the preparation of nanocrystalline diamond films was studied by using the intermittent growth mode of direct current hot cathode (PCVD) and the conventional nucleation of microcrystalline diamond films in CH4-H2 atmosphere. Artificial intervention secondary nucleation refers to the quadratic nucleation induced by the periodic change of growth temperature, so as to realize the nanocrystalline growth of diamond film. The periodic growth of diamond films is divided into sedimentary and intervening phases. During the depositional phase, the growth of diamond films is mainly achieved. During the intervening period, the deposition temperature is reduced to 600 ° C and then returned to the growth temperature to complete a growth cycle. The study of intermittent cycle mainly focused on the effect of artificial intervention induced secondary nucleation at different intermittent time. The intermittent time was set as 1 min, 5 min, 10 min, 15 min, 20 min, and the growth time was set as 20 min. The total The deposition time is 6 h. The samples were analyzed by Raman spectroscopy, SEM and XRD. The results show that the mode of intermittent growth and intermittent cycle in direct current hot cathode PCVD method can induce the occurrence of secondary nucleation. Appropriate choice of intermittent cycle is beneficial to secondary Formation of nucleation groups.