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近来表明,用于空间设备的线性微波放大器中,所用的大量的各种类型微波晶体管都是对辐射敏感的。由于晶体管的h_(FE)是对辐射非常敏感的参数,所以在空间长期工作的放大器,由于晶体管偏压条件的改变而导致其微波性能过早地下降。本文首先介绍影响线性微波晶体管放大器整个辐射灵敏度的各种因素,接着列举了对L波段和S波段前置放大器进行地面辐射试验所得的实验结果。根据估计的空间辐射剂量级进行计算所得之结果表明:在设计放大器时,若忽视辐射的影响,就可能导致放大器只有几周而不是几年的工作寿命。本文根据对元件和放大器辐照所得的实验结果,提出了使微波集成电路晶体管放大器达到耐辐射的方法。
Recently it has been shown that a large number of various types of microwave transistors used in linear microwave amplifiers for space devices are radiation sensitive. Since the h_ (FE) of a transistor is a very radiation sensitive parameter, an amplifier operating in space for long periods of time has its microwave performance degraded prematurely due to changes in the transistor bias conditions. This article first describes the various factors that affect the overall radiation sensitivity of a linear microwave transistor amplifier, followed by an example of the experimental results of a ground-based radiation test on L-band and S-band preamplifiers. Calculations based on the estimated spatial radiation dose level show that when designing an amplifier, neglecting the effects of radiation can cause the amplifier to have operating lives of only a few weeks instead of years. In this paper, based on the experimental results obtained by irradiating the components and the amplifier, a method of making the radiation resistance of the microwave integrated circuit transistor amplifier is proposed.