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用瞬态电容谱技术(DLTS)能探测到10~(-3)×|N_D—N_A|的深能级中心。能量范围从0.2ev到禁带中心。实验中测量了宽接触,条形以及老化各阶段的AlGaAsDH结构。给出了各样品典型的DLTS谱。着重观察0.35ev(LE_2),0.89ev(LE_4)及LED三个电子陷阱的特性,讨论了这些能级与器件工艺和性能之间的关系。概述了这些深能级与衰退机理之间的联系。
The deep level centers of 10 ~ (-3) × | N_D-N_A | can be detected by the transient capacitance spectroscopy (DLTS). Energy range from 0.2ev to forbidden band center. In the experiment, AlGaAsDH structures of wide contact, strip and aging phases were measured. The typical DLTS spectra for each sample are given. The characteristics of three electron traps 0.35ev (LE_2), 0.89ev (LE_4) and LED were observed. The relationship between these energy levels and device process and performance was discussed. The link between these deep levels and the mechanism of recession is outlined.