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引上法(CZ法),由于是从坩埚的熔体中一边旋转晶体,一边上引晶体,所以又称为旋转引上法。这种方法最早只用于低熔点金属和离子晶体的单晶生长,自从五十年代初应用于锗和硅的半导体单晶生长以来,一直受到人们的重视。以后,随着电子工业的急剧发展,在大量制造既大形又完整的晶体方面,引上法的技术不断地得到发展。目前,为了希望既省力、又稳定,广泛地采用直径自动控制ADC(模-数转换)技术。这种引上法首先在六十年代初作为氧化物晶体生长方法在工业上生长Cr:Al_2O_3(红宝石)、Nd:Y AG
CZ method, because it is from the crucible melt while rotating the crystal, while the cited crystal, it is also known as the spin-on method. This method was originally used only for single crystal growth of low-melting-point metals and ionic crystals, and has been valued by many since it was used in the growth of semiconductor single crystals of germanium and silicon in the early 1950s. Later, with the rapid development of the electronics industry, the technology leading to the law has been continually developed in the large-scale manufacture of both large and complete crystals. At present, in order to save energy and to stabilize, it is widely used to automatically control the diameter of ADC (analog-digital conversion) technology. This lead-in method first industrially grown Cr: Al 2 O 3 (ruby) as an oxide crystal growth method in the early 1960s, Nd: Y AG