High-quality Bi2?xPbxSr2CaCu2O8+δ (Bi2212) single crystals have been successfully grown by the traveling solvent floating zone technique with a wide range of Pb substitution (x=0–0.8). The samples are characterized by transmis-sion electron microscope (TEM) and measured by high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) with different photon energies. A systematic evolution of the electronic structure and superstructure with Pb substitution has been revealed for the first time. The superstructure shows a significant change with Pb substitution and the incommensurate modulation vector (Q) decreases with increasing Pb substitution. In the meantime, the superstructure intensity from ARPES measurements also decreases dramatically with increasing Pb concentration. The superstructure in Bi2212 can be effectively suppressed by Pb substitution and it nearly disappears with a Pb substitution of x=0.8. We also find that the superstructure bands in ARPES measurements depend sensitively on the photon energy of lasers used;they can become even stronger than the main band when using a laser photon energy of 10.897 eV. These results provide important information on the origin of the incommensurate superstructure and its control and suppression in bismuth-based high temperature superconductors.