近年来在集成电路制造过程中,外延生长是十分重要的工序,通常选择(111)晶面向<110>方向偏某一角度的硅单晶,经过切割、磨片、抛光、氧化和光刻形成埋层扩散窗口,进行隐埋扩散。对我厂生产的P-24电视机集成电路、由于要求高β、大电流特性好、纵向PNP晶体管的集电极需要采取自由选择电位。它与一般常规隐埋工艺不同,先要进行锑埋层扩散,还要进行硼埋层扩散,然后用高频感应加 In recent years, epitaxial growth is a very important process in the manufacturing process of integrated circuits. Usually, a (111) crystal plane is selected to be a silicon single crystal deviating from the <110> direction by an angle, cutting, polishing, polishing, Buried diffusion window for buried diffusion. The P-24 TV integrated circuit produced by our factory, due to the requirement of high β, high current characteristics, vertical PNP transistor collector need to take a free choice of potential. It is different from the general conventional buried technology, first antimony buried layer diffusion, but also for the proliferation of buried boron layer, and then use high-frequency induction