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本文报道用电子显微镜观察、X-射线衍射和红外吸收谱等方法研究 a-Si:H 薄膜的毫微秒(ns)脉冲激光退火的结果。从红外吸收谱发现了退火后薄膜中H相关振动吸收的增强现象;通过电子显微镜观察到了厚度≥3μm 的薄膜退火后具有多层结构。讨论了 H 在产生以上现象的机理中的作用。
This paper reports the results of nanosecond (ns) pulsed laser annealing of a-Si: H thin films by means of electron microscopy, X-ray diffraction and infrared absorption spectroscopy. The enhancement of H-related vibrational absorption in the film after annealing was found from the infrared absorption spectrum; the film with the thickness of ≧ 3 μm was observed by the electron microscope to have a multilayer structure after annealing. The role of H in the mechanism by which the above phenomenon occurs is discussed.