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本文提出了一种新型的异质结双极型晶体管.该管的收集区和基区由磷化铟材料做成.和硅平面晶体管类似,管子的基区采用一般的氧化层(Al_2O_3)掩蔽扩散工艺(在这里是锌扩散).而管子的发射区则采用溅射氧化镉簿层的方法形成,因而管子的结构是平面型的.氧化镉是一种宽禁带(Eg=2.3eV)的N型半导体.氧化镉和磷化铟组成了晶体管的宽发射极.本文介绍了制管工艺.给出并分析了晶体管的伏一安特性.初步结果是:晶体管共发射极电流增益h_f_a=10(I_C=50mA,V_(cr)=15V).发射极一收集极间的击穿电压BV_(CED)=30V.这种晶体管及其工艺为InGaASP/InP器件及其光电集成制作提供了一条可能的新途径.
In this paper, a novel heterojunction bipolar transistor is proposed, in which the collecting region and the base region of the tube are made of indium phosphide, and similar to the silicon planar transistor, the base region of the tube is masked with a common oxide layer (Al 2 O 3) Diffusion process (here, diffusion of zinc), and the emission area of the tube is formed by sputtering a cadmium oxide layer so that the structure of the tube is planar. Cadmium oxide is a wide band gap (Eg = 2.3 eV) Of the N-type semiconductor.Cadmium oxide and indium phosphide constitute the wide emitter of the transistor.In this paper, the tube technology is introduced.Volume-ampere characteristics of the transistor are given and analyzed.The preliminary results are: transistor emitter current gain h_f_a = 10 (I_C = 50mA, V_ (cr) = 15V). The emitter-collector breakdown voltage BV_ (CED) = 30V. This transistor and its process for the InGaASP / InP devices and optoelectronic integrated production provides a Possible new ways.