论文部分内容阅读
现已实验演示了弱背景应用的、5 μm截止波长的HgCdTe电荷耦合器件(CCD)红外探测器列阵。这种完全单片化的128×128元CCD列阵把时间延迟积分(TDI)探测、顺次读出多路传输、电荷至电压转换和缓冲放大等注入到HgCdTe探测器芯片中。这种器件在77K下操作,在3.0 μm至5.5 μm光谱波段中,对于6×10~(12)个光子/cm~(2)·sec的背景通量水平,产生的平均探测率值超过3×10~(13)cm·Hz~(1/2)/W。总的性能数据表明,单片HgCdTe CCD器件是一种有发展前景的替代现有中波红外混成焦平面列阵技术的方法。
An HgCdTe charge-coupled device (CCD) infrared detector array of 5 μm cut-off wavelength has been experimentally demonstrated for weak background applications. This fully monolithic 128 × 128 CCD array injects time-delay integration (TDI) probing, sequential read multiplexing, charge-to-voltage conversion and buffer amplification into the HgCdTe detector chip. The device operates at 77K and produces an average detection rate of more than 3 for a background flux level of 6x10-12 photons / cm ~ (2) .sec in the spectral range of 3.0 μιη to 5.5 μιη × 10 ~ (13) cm · Hz ~ (1/2) / W. The overall performance data shows that the monolithic HgCdTe CCD device is a promising method to replace the existing hybrid IRFPA array technology.