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本文研究了一种新型微机械ＣＭＯＳ热导压力敏感器。其压力测量范围是０．００１－１００Ｔｏｒｒ。整个量程范围内，多晶硅热敏电阻相对变化（即灵敏度）优於３０％。为使敏感器结构性能优化，我们首次开发了一软件包对器件热电性能进行数值模拟。三维模拟问题被简化为两个２－Ｄ模拟，并将由稳态能量平衡得到的方程组离散化用非线性Ｇａｕｓｓ－Ｓｅｉｄｅｌ算法迭代求解。器件灵敏度的模拟结果和实验值相吻合。文中还对温度分布进行了计算，对材料的热电常数和器件几何尺寸的影响做了分析。
This paper studies a new type of micromechanical CMOS thermal conductivity pressure sensor. The pressure measurement range is 0.001-100Torr. The entire range of polycrystalline silicon thermistor relative change (ie, sensitivity) better than 30%. To optimize the structural performance of the sensor, we first developed a software package to numerically simulate the thermoelectric properties of the device. The three-dimensional simulation problem is reduced to two 2-D simulations, and the system of equations derived from steady-state energy balance is discretized using a non-linear Gauss-Seidel algorithm iteratively. The simulation results of the device sensitivity are consistent with the experimental values. The temperature distribution is also calculated in this paper, and the influence of the thermoelectric constant and the geometry of the device is analyzed.