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最近我们在研究硅中杂质扩散与缺陷的关系时，偶然观察到一种如压印位错“花结”的缺陷，为了了解这种缺陷的形成原因和结构特点，我们对大量实验样片进行了化
Recently, when we studied the relationship between impurity diffusion and defects in Si, we occasionally observed a defect such as “sagging” of the imprint dislocations. In order to understand the formation reason and structural characteristics of this defect, we conducted a large number of experimental samples The