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全耗尽绝缘体上硅(FDSOI)器件具有出色的短沟道效应(SCE)控制能力等优势,是22 nm及以下的CMOS技术节点中的有力竞争者。为了研究减薄埋氧层(BOX)厚度对FDSOI器件性能和短沟道效应的影响,并进一步提高FDSOI器件的短沟道效应控制能力,制备了超薄BOX(UTB)FDSOI器件,并同时制备除BOX厚度外其余条件完全相同的145 nm厚BOX FDSOI对比器件。对制备的器件进行了电学性能测试,展示了两种器件的传输特性和转移特性曲线,并且对器件施加背栅偏压以研究其对器件性能的调制作用。测试结果显示,UTB FDSOI器件的关断电流I_(off)与145 nm厚BOX FDSOI器件相比降低了近50%,DIBL性能也得到了显著提升。此外,施加背栅偏压不仅可以更灵敏地调制FDSOI器件性能,而且可以有效地优化器件的短沟道效应。
Fully depleted silicon-on-insulator (FDSOI) devices offer superior short-channel-effect (SCE) control capabilities and are strong contenders for CMOS technology nodes up to 22 nm. In order to study the effect of BOX thickness on the performance and short channel effect of FDSOI devices and to further improve the short channel effect control ability of FDSOI devices, ultrathin BOX (UTB) FDSOI devices were prepared and prepared simultaneously A BOX FDSOI contrast device of 145 nm thickness identical in thickness to the rest of the BOX thickness. The fabricated devices were tested for their electrical properties, showing the transmission and transfer characteristics of the two devices and applying a back-gate bias to the device to investigate its modulation of device performance. Test results show that the off-current I_off of the UTB FDSOI device is reduced by nearly 50% compared to the 145-nm BOX FDSOI device, and the DIBL performance is also significantly improved. In addition, applying a back-gate bias can not only modulate FDSOI device performance more sensitively, but also effectively optimize the short-channel effect of the device.