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本文从器件的几何、材料和工艺参数出发,获得了低功耗低噪声增强型(E型)GaAsMESFET(简称EFET,下同)模型的等效电路元件值.研究了器件的几何、材料和工艺参数及RF性能和直流功耗的关系.给出了EFET物理参数的最佳取值范围,可为超低功耗微被单片集成电路中有源器件的设计提供依据.
In this paper, equivalent circuit elements of GaAsMESFET with low power consumption and low noise (E-type) are obtained from the geometrical, material and technological parameters of the device.The geometric, material and process Parameters and RF performance and DC power consumption.The optimum range of EFET physical parameters is given, which can provide the basis for the design of active devices in ultra-low power micro-monolithic integrated circuits.