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利用UHV/CVD系统,在一个相对较低的温度500℃下,研究了Si1-xGex层中的Ge含量与生长条件之间的关系,此时的Si1-xGex层处于一种亚稳的状态。并直接在Si衬底上生长制备了10个周期的3.0 nm-Si0.5Ge0.5/3.4 nm-Si多量子阱。拉曼谱、高分辨显微电镜和光荧光谱对其结构和光学性能进行的表征表明这种相对较厚的Si0.5Ge0.5/Si多量子阱结构基本上仍是近平面生长的,内部没有位错,其在电学和光学器件上具有潜在的应用。
Using the UHV / CVD system, the relationship between the Ge content in the Si1-xGex layer and the growth conditions was investigated at a relatively low temperature of 500 ° C, in which the Si1-xGex layer was in a metastable state. And a 10-nm 3.0nm-Si0.5Ge0.5 / 3.4nm-Si multiple quantum well was grown directly on the Si substrate. Characterization of the structure and optical properties of the relatively thick Si0.5Ge0.5 / Si multiple quantum well structure by Raman spectroscopy, high resolution microscopy and fluorescence spectroscopy shows that the relatively thick Si0.5Ge0.5 / Si multiple quantum well structure is still substantially near-plane growth with no Dislocations, which have potential applications in electrical and optical devices.