日本 OKI 电气工业公司研究实验室 A.Hashimoto 等人最近采用低压 MOCVD 技术在硅衬底上制成 AlGaAs 可见光二极管。这种发光管与硅器件体系的结合将产生一系列新型器件,可望用于光学定时脉冲、高速方数据互连,以及并行高速数据处理系统等面。所用的气体源是三甲基镓(TMG)、三甲基铝(TMA)和砷烷(AsH_3)。N 型与 P A.Hashimoto et al., Research Laboratory, OKI Electric Industries, Ltd., Japan, recently used low-pressure MOCVD technology to make AlGaAs visible light diodes on silicon substrates. This combination of LED and silicon device system will produce a series of new devices, is expected to be used for optical timing pulse, high-speed data interconnect, and parallel high-speed data processing systems and other surfaces. The gas sources used are trimethylgallium (TMG), trimethylaluminum (TMA) and arsine (AsH 3). N type and P