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本文主要对阈值波长可达1.25μm的InGaAsP光电阴极进行了详细的研究。在国内首次实现了在0.5μm～1.25μm波段范围内具有光电响应的半导体光电阴极。用Cs和O_2激活后得到的光电阴极在1.06μm处的反射式光电灵敏度为3.4mA/W,量子效率为0.4％。本文还对激活表面及热清洁工艺进行了系统地分析,确定出了最佳的表面清洁温度及时间。
In this paper, the InGaAsP photocathode with a threshold wavelength of 1.25μm has been studied in detail. For the first time in China, a semiconductor photocathode having a photoelectric response in the wavelength range of 0.5 μm to 1.25 μm has been realized. The photocathode obtained after activation with Cs and O 2 had a reflective photoelectric sensitivity of 3.4 mA / W at 1.06 μm and a quantum efficiency of 0.4%. This article also systematically analyzed the activated surface and the thermal cleaning process to determine the best surface cleaning temperature and time.