本文研究了砷化镓阳极氧化和热氧化的规律,并测量了自生长氧化膜的x光衍射谱、红外吸收光谱、折射率、线胀系数和杨氏模量.这些数据表明,GaAs自生长氧化膜可应用于以GaAs为衬底的平面光学器件及集成光学,同时,利用热氧化膜时,必须考虑应力及光弹性效应. In this paper, the regularity of anodic oxidation and thermal oxidation of gallium arsenide (GaAs) was investigated and the x-ray diffraction spectrum, infrared absorption spectrum, refractive index, linear expansion coefficient and Young’s modulus of self-grown oxide film were measured.These data indicate that GaAs self- Oxide film can be applied to GaAs as a substrate of planar optics and integrated optics, while using thermal oxide film, we must consider the stress and photoelastic effects.