【摘 要】
：
The superior properties of GaN-based materials,including a large sheet carrier concentration (1013cm-2) resulting from the strong polarization fields at the AlG
【机 构】
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The State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electron Scie
论文部分内容阅读
The superior properties of GaN-based materials,including a large sheet carrier concentration (1013cm-2) resulting from the strong polarization fields at the AlGaN/GaN hetero-interface,a wide band gap (3.4eV for GaN,6.2eV for AlN) and high breakdown field (106V.cm-1),have made AlGaN/GaN metal-semiconductor highelectron-mobility transistors (MESHEMTs) the subject of intense investigation as an attractive candidate for high-voltage,high-power operation at microwave frequencies.However,the large-scale practical application of GaN-based MESHEMTs is primarily limited by current collapse.Another limitation of AlGaN/GaN MESHEMTs is the large gate leakage current,a technological limitation that generally characterizes GaN-based devices.Over the past few years,considerable attention has been directed toward AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs).Various high dielectric constant (HK) insulators,such as Al2O3,[1-6] HfO2,[1,2,7-10] ZrO2,[8,11,12] SiN,[13,14]and BST,[15] have been studied for AlGaN/GaN MISHEMTs.
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