Permalloy Ni80Fe20 films have been grown on thermal oxidized Si (111) wafers by magnetron sputtering at well-controlled substrate temperatures of 300, 500, 640 and 780 K in 0.65 Pa argon pressure. The base pressure was about 1×10-4 Pa. The deposition rate was about 5 nm/min for all the films. The structure of the films was studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. The composition of the films was analyzed using scanning Auger microprobe. The resistance and magnetoresistance of the films were measured using four-point probe technique. The results show that the content of oxygen in the films decreases gradually with raising substrate temperature. In addition, the surface morphology of the films presents notable change with the increasing of the substrate temperature; the residual gases and defects decrease and the grains have coalesced evidently, and then the grains have grown up obviously and the texture of (111) orientation develops gradually in the grow Permalloy Ni80Fe20 films have been grown on thermal oxidized Si (111) wafers by magnetron sputtering at well-controlled substrates temperatures of 300, 500, 640 and 780 K in 0.65 Pa argon pressure. The base pressure was about 1 × 10 -4 Pa. The structure of the films was studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. The structure of the films was analyzed using scanning Auger microprobe. The resistance and was 5 nm / min for all the films. magnetoresistance of the films were measured using four-point probe technique. The results show that content of oxygen in the films in gradually decreasing with raising substrate temperature. In addition, the surface morphology of the films presents notable change with the increasing of the substrate temperature ; the residual gases and defects decrease and the grains have coalesced evidently, and then the grains have grown up obviously and the texture of (111) orientation develops gra dually in the grow