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在分子束外延生长的InAs/In0.52Al0.48As/InP异质结体系中,形成InAs量子线.这些InAs量子线在生长和结构方面有一些独到的特性,并介绍了本实验室在研究InAs量子线的生长和结构方面所做的工作.
InAs / In0.52Al0.48As / InP heterojunction system grown by molecular beam epitaxy, InAs quantum wires are formed. These InAs quantum wires have some unique characteristics in terms of growth and structure, and introduced the research of InAs Quantum wire growth and structure of the work done.