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采用直流磁控溅射法,结合氧化法热处理在硅基底上制备VO_2薄膜,通过SEM、XRD、XPS、FTIR红外透射率等测试,从多角度分析了氧化热处理对VO_2薄膜截面结构、晶相成分、成分价态、红外透射率相变特性的影响。实验分析表明,采用直流磁控溅射与氧化热处理相结合的方法,可获得主要成分为具有明显择优取向单斜金红石结构VO_2(011)晶体的氧化钒薄膜,氧化热处理有利于VO_2晶粒生长并增加薄膜致密性,同时其红外透射率具有明显相变特性,相变温度为60.5℃,3~5μm、8~12μm波段的红外透射率对比值达到99.5%,实现了对红外波段辐射的开关功能,适合应用于红外探测器的激光防护研究,同时可为深入研究对薄膜的氧化热处理提供参考依据。
VO2 films were prepared on silicon substrate by direct current magnetron sputtering combined with oxidation heat treatment. The cross-sectional structure, crystal phase composition and structure of VO_2 films were analyzed by SEM, XRD, XPS and FTIR. , Component valence, infrared transmittance phase transition characteristics. Experimental results show that vanadium oxide film with VO_2 (011) crystal of monoclinic rutile structure with predominantly preferred orientation can be obtained by the combination of DC magnetron sputtering and oxidative heat treatment. The oxidative heat treatment is beneficial to the growth of VO_2 crystal grains Increase the compactness of the film, and at the same time, the infrared transmittance has the obvious phase transition characteristic. The phase transition temperature is 60.5 ℃, the contrast ratio of the infrared transmittance in the wavelength range of 3 ~ 5μm and 8 ~ 12μm reaches 99.5%, realizing the switching function to the infrared band radiation , Which is suitable for the research on laser protection of infrared detectors. At the same time, it can provide a reference for further study on the oxidation and heat treatment of thin films.