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用接触式原子力显微镜来观察 4 6 0℃低温下生长的 In0 .35Ga0 .6 5As/ Ga As外延层形貌 .实验发现 ,这种 4 6 0℃低温生长材料的失配外延层既不是层状的 Fvd M生长模式也不是岛状的 SK自组织生长模式 ,而是由原子单层构成的梯田状大岛 .原子力显微镜测试表明台阶的厚度为 0 .2 8nm,约为一个原子单层 ,这种介于层状和岛状生长之间的模式有助于了解失配异质外延的生长过程
The morphology of the In0.35Ga0.65As / GaAs epitaxial layer grown at a low temperature of 460 ℃ was observed by contact atomic force microscopy. It was found that the mismatched epitaxial layer of the low temperature growth material at 460 ℃ was neither layered Fvd M growth mode is not the island of SK self-organized growth mode, but by the monolayer composed of terraced island. AFM test shows that the thickness of the step is 0.28nm, about a single layer of atoms, which Species that are interlayered between laminar and island-shaped growth help to understand the growth process of mismatched heteroepitaxy