本文叙述一种新型硬掩模——采用离子注入法制作的高精度掩模。此种掩模制作工艺简单,其分辨率、抗药性、表面耐磨性、图形完整性等,均优于目前广泛使用的其它硬掩模。尤其是,它具有与与电子束曝光、x 射线曝光技术相结合的潜在优越性,可以期待今后在超 LSI 中采用。在我们研制工作中,已经制出多种集成电路的掩模,部分产品在工艺线上试用。效果良好。 This article describes a new type of hard mask - a high precision mask made using ion implantation. Such a mask has a simple manufacturing process and has better resolution, chemical resistance, surface abrasion resistance, and graphic integrity than other hardmasks that are widely used at present. In particular, it has potential advantages associated with electron beam exposure and x-ray exposure and can be expected to be adopted in ultra LSIs in the future. In our research and development work, we have made a number of integrated circuit mask, part of the product in the process line trial. Good effect.