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用等离子体增强化学气、相沉积（PECVD）方法，以CH4和SiH4为反应气体，在低电极温度（180℃）条件下制备了碳化硅薄膜．实验结果表明，低电极温度条件下沉积参数（反应气体流量比、反应气体压力、射频功率）的变化对薄膜的沉积和性质影响较大．制得的薄膜均匀性良好，其化学组成Si／C在0．72-4．0之间，具有（5-9）×109dyn／cm2的压应力．红外光谱结果证明，随着薄膜化学成分的变化，薄膜的结构也改变。同氮化硅薄膜相比，制得的碳化硅薄膜具有良好的抗溶液腐蚀性．
Silicon carbide films were prepared by plasma-enhanced chemical vapor deposition (PECVD) with CH4 and SiH4 as reaction gases at low electrode temperature (180 ℃). The experimental results show that the deposition parameters and the properties of the films have a great influence on the deposition parameters (reaction gas flow ratio, reaction gas pressure and RF power) under low electrode temperature. The obtained film had good uniformity with a chemical composition of Si / C between 0.72-4.0 and compressive stress of (5-9) x 109dyn / cm2. Infrared spectroscopy results show that with the change of the chemical composition of the film, the structure of the film also changes. Compared with the silicon nitride film, the resulting silicon carbide film has good resistance to solution corrosive.