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本文综述了离子注入理论,从粒子散射角度处理注入分布,在非晶靶模型之上提出了硅晶体靶模型,并用Fatran 77语言在此模型上实现了Boltzmann算法。模拟精度远远高于非晶靶模拟,与实验数据符合。与SUPREM—Ⅲ连通。
In this paper, the ion implantation theory is reviewed. The implantation distribution is treated from the perspective of particle scattering. A silicon target model is proposed on the amorphous target model. The Boltzmann algorithm is implemented on this model using Fatran 77 language. The accuracy of simulation is much higher than that of amorphous target, which accords with the experimental data. And SUPREM-Ⅲ connectivity.