论文部分内容阅读
用不附加另外电源的ＤＣ－ＰＣＶＤ装置沉积Ｓｉ３Ｎ４薄膜，，ＸＲＤ ＴＥＭ检查出这种Ｓｉ３Ｎ４是非晶态、ＩＲ，ＡＥＳ验证这种薄膜的主要成分是Ｓｉ３Ｎ４、ＴＥＭ与ＯＭ研究 薄膜组织结构。
Si3N4 thin films were deposited by DC-PCVD with no additional power supply. The Si3N4 films were amorphous by XRD TEM. The main constituents of this thin film were confirmed by IR and AES. Si3N4, TEM and OM were used to study the structure of thin films.