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近几年来,在绝缘体上进行外延硅层生长得到了很大的重视.其中以蓝宝石和尖晶石为基体的外延硅层研究得较多,因为这种外延层较薄(典型值～1μm),基体绝缘性好,耐辐照性能强;用这样的材料做MOS集成电路,具有高频性能好、耐辐照的优点,特别适用于宇航环境.但这种外延层(称异质外延)不容易做得好,这种外延层中往往存在着大量堆垛缺陷和孪晶薄层.在实践中,人们常需采用各种有效的实验手段来测试外延层的质量,以研究工艺过程中有关条件对质量的影响,从而选择最佳的工艺条件.
In recent years, great attention has been paid to the growth of epitaxial silicon layer on insulator, of which the epitaxial silicon layer based on sapphire and spinel has been studied more often because the epitaxial layer is thinner (~ 1μm typical) , The substrate insulation is good, radiation-resistant performance is strong; with such materials as MOS integrated circuits, with high-frequency performance, radiation-resistant advantages, especially for aerospace environment.But this epitaxial layer (called heteroepitaxial) Not easy to do well, there are often a lot of stacking defects and twins in the epitaxial layer.In practice, people often need to use a variety of effective experimental methods to test the quality of the epitaxial layer to study the process The impact of conditions on the quality, so as to select the best process conditions.