转移电子器件是一种常用的微波固体功率源,制备转移电子器件常用的材料是n-GaAs单晶,目前国内对n-GaAs单晶质量的在线检测主要测量它的电学参数.但是在器件生产中发现,即使用电学参数相同的材料制备器件,仍会出现成品率高低浮动.已有人用光致发光法研究GaAs材料性质.本文报道用光致发光法在线检测转移电子器件材料质量.测量结果表明,电学参数测量符合要求时,制备转移电子器件成品率较低的n-GaAs外延片中存在较高浓度的施主杂质与Ga空位的络合物. Transfer of electronic devices is a commonly used microwave solid-state power source, the preparation of the transfer of electronic devices commonly used material is n-GaAs single crystal, the current domestic n-GaAs single crystal quality of the online measurement of the main measurement of its electrical parameters.But in the device production Found that even with the electrical parameters of the same material preparation of the device, there will still be the floating rate of the finished product has been the use of photoluminescence GaAs material properties of the study reported in this paper photoluminescence online detection of electronic materials transfer device quality measurement results The results show that there is a high concentration of donor and Ga vacancy complexes in the n-GaAs epitaxial wafers with low yield of transfer electronic devices when the electrical parameters are measured satisfactorily.