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建立了高压RESURF LDMOS的开态击穿模型.该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响,获得了开态下 LDMOS 漂移区中的电场分布.基于该模型可以计算出高压 RESURF LDMOS 的电学SOA.数值模拟和实验结果部分验证了模型的正确性.该模型有助于深入理解 LDMOS开态击穿的物理过程,可用于指导高压LDMOS的设计.
The open-breakdown model of high-voltage RESURF LDMOS is established, which considers the charge-carrier saturation phenomenon and parasitic bipolar transistor, and obtains the electric field distribution in the LDMOS drift region on the basis of the model. The high-voltage RESURF LDMOS electrical SOA is validated by numerical simulation and experimental results.The model can be used to further understand the physical process of LDMOS on-state breakdown and can be used to guide the design of high-voltage LDMOS.