描述了一种拓展电子束光刻中的临近效应来制备特征尺寸在亚20nm的金属Nanogap的方法.结合图形转移过程(如去胶等),利用临近效应灵活有效地制备了金属(如Au或者Ag等)Nanogap结构及其阵列.采用GDSII软件设计图形,以电子束光刻为手段制备Nanogap的原始纳米连接图形,然后通过去胶过程获得金属的Nanogap.另外,通过控制电子束光刻的剂量,能够把Nanogap的尺寸降低到约10nm. A method of extending the proximity effect in electron beam lithography to fabricate Nanogap with a feature size of sub-20 nm has been described, which combines the pattern transfer process (eg, de-gluing, etc.) with the proximity effect to produce metals such as Au or Ag, etc.) Nanogap structure and its array.GDSII software was used to design the pattern, electron nanolithography was used to prepare Nanogap’s original nanometer connection pattern, and then the nanogap was obtained by the de-gumming process.In addition, by controlling the dose of electron beam lithography , Can reduce the size of Nanogap to about 10nm.