1.前言自1980年冯·克利钦发现了量子化霍尔效应以来,完成了大量不同样品(MOS 场效应晶体管,以及 GaAs/AlxGa_(1-x)As 异质结等)的量子化霍尔电阻(QHR)(量子数 i=2或4的平台上)的精确比对,并在其基础上建立了基标准。这些比对采用了电阻的传递标准(100,200及6453.2Ω等)。获得的不确定度大约为1×10~(-8),即一个标准偏差估值(1σ), 1. Introduction Since von Klitschk discovered the quantum Hall effect in 1980, a large number of different Hall effect transistors (MOS field effect transistors, GaAs / AlxGa_ (1-x) As heterojunctions, etc.) Resistance (QHR) (quantum number i = 2 or 4 on the platform) of the precise alignment, and on the basis of which established a base standard. These alignments use resistance transfer criteria (100, 200 and 6453.2Ω, etc.). The uncertainty obtained is about 1 × 10 -8, a standard deviation estimate (1σ)