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碲铟汞Hg3In2Te6是(In2Te3)x-(Hg3Te3)1-x(x=0.5)的化合物,被称为缺陷相化合物。在表面运用透明电极可以得到很高的量子效率。为了克服形成肖特基后漏电流过大的影响,运用等离子增强化学气相沉积在碲铟汞表面形成氧化层。运用直流平面磁控溅射技术和热电子蒸发技术分别在单晶HgInTe表面形成了ITO(SnO2+In2O3)/HgInTe和In/HgInTe接触,利用I-V测试仪对其I-V特性进行测量,运用能带结构和异质结理论对测量的I-V结果进行了描述,测量结果符合热电子发射理论。结果表明:ITO/HgInTe形成具有整流特性的肖特基接触,通过计算得到了ITO/HgInTe的肖特基势垒高度为0.506eV,理想因子n为3.2,串联电阻Rs为2600Ω;In/HgInTe形成欧姆接触。并且发现了在波长1.55μm处有很好的响应光谱,同时室温下峰值探测率D*λ达到了1011cm·Hz1/2·W-1。
Indium Hg3In2Te6 is a compound of (In2Te3) x- (Hg3Te3) 1-x (x = 0.5), which is called a defect phase compound. In the surface of the transparent electrode can be very high quantum efficiency. In order to overcome the excessive leakage current after the Schottky barrier formation, an oxide layer is formed on the surface of the indium telluride substrate by plasma enhanced chemical vapor deposition. ITO (SnO2 + In2O3) / HgInTe and In / HgInTe contacts were formed on single-crystal HgInTe surface by direct current planar magnetron sputtering and hot electron evaporation respectively. The IV characteristics were measured by IV tester. And heterojunction theory described the measured IV results, the measurement results in line with the hot electron emission theory. The results show that the Schottky contact with the rectifying property is formed by ITO / HgInTe. The calculated Schottky barrier height of ITO / HgInTe is 0.506eV, the ideal factor n is 3.2 and the series resistance Rs is 2600Ω. The formation of In / HgInTe Ohm contact. And found to have a good response spectrum at a wavelength of 1.55 μm while the peak detection rate D * λ at room temperature reached 1011 cm · Hz1 / 2 · W-1.