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当离子束以一定的入射角刻蚀旋转的样品时,掩膜间样品的刻蚀速率(指间隙d与掩膜厚度T_m的比值在适当的范围内时),由于掩膜对离子束的荫蔽作用而明显减少。本文对此进行了理论计算,并用实验进行验证。发现d/T_m值在一定范围内,改变入射角可控制刻蚀槽底的表面形态。同时也考察了不同入射角对多晶硅、AZ1350J光刻胶刻蚀速率和刻蚀台阶倾角的影响,并求得了短沟道MOS FET多壁自对准工艺(multiple-wall self alignment)中离子束刻蚀的最佳工艺参数。
When the ion beam is used to etch a rotating sample at a certain angle of incidence, the etching rate of the sample between masks (ie, the ratio of the gap d to the mask thickness T_m is within a suitable range), the shadow of the ion beam due to the mask Significantly reduce the role. This article has carried on the theoretical calculation, and uses the experiment to verify. Found d / T_m value within a certain range, changing the angle of incidence can control the bottom surface of the etching groove morphology. The effects of different incident angles on the etch rates of polycrystalline silicon and AZ1350J photoresist and the etch step dip were also investigated. The ion beam engraving in short-channel MOSFET multi-wall self alignment Erosion of the best process parameters.